| PART |
Description |
Maker |
| 2SC3503 2SC3503CSTU 2SC3503DSTU 2SC3503ESTU 2SC350 |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| 2SD986 |
Silicon NPN Power Transistors TO-126 package
|
Savantic
|
| 2N5190 |
Silicon NPN Power Transistors TO-126 package
|
Savantic
|
| HTN4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-126 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| 2SA1930S |
Silicon PNP transistor in a TO-126 Plastic Package.
|
Foshan Blue Rocket Elec...
|
| KSE13003TH1ATU |
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BD139-25 BD135-25 BD137-25 |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|126
|
HIROSE ELECTRIC Co., Ltd.
|
| 2SB631KF 2SB631KD 2SB631E 2SB631D 2SB631KE 2SB631F |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 1A条一（c）|26
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|26
|
Riedon, Inc.
Sanyo Electric Co., Ltd.
|
| 577500B00000 |
For use with TO-126 packages
|
AAVID[Aavid Thermalloy, LLC]
|
| BD234 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
